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STGWA60H65DFB

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

Product Category: IGBT Transistors
Mfr. Part #
STGWA60H65DFB
Manufacturer: STMicroelectronics
Package: Tube
Lead Free Status /RoHS Status:
Data Sheet: STGWA60H65DFB Datasheet
Inventory: In Stock

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Mfr. Part #: STGWA60H65DFB

Specifications

Specifications

Manufacturer STMicroelectronics

Technology Si

Package / Case TO-247-3

Mounting Style Through Hole

Configuration Single

Collector- Emitter Voltage VCEO Max 650 V

Collector-Emitter Saturation Voltage 2 V

Maximum Gate Emitter Voltage - 20 V, 20 V

Continuous Collector Current at 25 C 80 A

Pd - Power Dissipation 375 W

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 175 C

Series STGWA60H65DFB

Packaging Tube

Continuous Collector Current Ic Max 80 A

Height 5.15 mm

Length 20.15 mm

Operating Temperature Range - 55 C to + 175 C

Width 15.75 mm

Brand STMicroelectronics

Continuous Collector Current 80 A

Gate-Emitter Leakage Current 250 nA

Product Type IGBT Transistors

Standard Pack Qty 600

Subcategory IGBTs

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Mfr. Part #: STGWA60H65DFB