wholesale STGYA120M65DF2AG IGBT Transistors supplier,manufacturer,distributor

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STGYA120M65DF2AG

IGBT Transistors Automotive-grade trench gate field-stop IGBT, M series 650 V, 120 A low loss

  • IGBT Transistors
  • STGYA120M65DF2AG
  • STMicroelectronics
  • Tube
  • STGYA120M65DF2AG Datasheet
  • In Stock
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Mfr. Part #: STGYA120M65DF2AG

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  • Specifications

Specifications

Manufacturer STMicroelectronics
RoHS
Technology Si
Package / Case MAX-247-3
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 650 V
Collector-Emitter Saturation Voltage 1.65 V
Maximum Gate Emitter Voltage - 20 V, 20 V
Continuous Collector Current at 25 C 160 A
Pd - Power Dissipation 625 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Series STGYA120M65DF2AG
Qualification AEC-Q101
Packaging Tube
Brand STMicroelectronics
Gate-Emitter Leakage Current 250 uA
Product Type IGBT Transistors
Standard Pack Qty 600
Subcategory IGBTs

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Mfr. Part #: STGYA120M65DF2AG

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