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UF3C065080B7S

MOSFET 650V/80mOhm, SiC, FAST CASCODE, G3, D2PAK-7L, REDUCED Rth

Product Category: MOSFET
Mfr. Part #
UF3C065080B7S
Manufacturer: Qorvo
Package: Cut Tape/Reel
Lead Free Status /RoHS Status:
Data Sheet: UF3C065080B7S Datasheet
Inventory: In Stock

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Mfr. Part #: UF3C065080B7S

Specifications

Specifications

Manufacturer Qorvo

Technology SiC

Mounting Style SMD/SMT

Package / Case D2PAK-7

Transistor Polarity N-Channel

Number of Channels 1 Channel

Vds - Drain-Source Breakdown Voltage 650 V

Id - Continuous Drain Current 27 A

Rds On - Drain-Source Resistance 85 mOhms

Vgs - Gate-Source Voltage - 25 V, + 25 V

Vgs th - Gate-Source Threshold Voltage 6 V

Qg - Gate Charge 23 nC

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 175 C

Pd - Power Dissipation 136.4 W

Channel Mode Enhancement

Tradename SiC FET

Series UF3C

Packaging Cut Tape

Packaging Reel

Configuration Single

Brand Qorvo / UnitedSiC

Fall Time 7 ns, 6 ns

Moisture Sensitive Yes

Product Type MOSFET

Rise Time 8 ns, 7 ns

Standard Pack Qty 800

Subcategory MOSFETs

Typical Turn-Off Delay Time 25 ns, 26 ns

Typical Turn-On Delay Time 25 ns, 30 ns

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Mfr. Part #: UF3C065080B7S