wholesale 2N4339-E3 JFETs supplier,manufacturer,distributor

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E3

JFETs 50V N-Channel Through Hole 300mW TO-206AA (TO-18)

Product Category: JFETs
Mfr. Part #
2N4339-E3
Manufacturer: ROHM
Lead Free Status /RoHS Status:
Data Sheet: 2N4339-E3 Datasheet
Inventory: In Stock

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Mfr. Part #: 2N4339-E3

Specifications
Product Details

Specifications

Manufacturer ROHM

Product Category JFETs

Series -

Packaging Bulk

Mounting-Style SMD/SMT

Package-Case TO-206AA, TO-18-3 Metal Can

Mounting-Type Through Hole

Supplier-Device-Package TO-206AA (TO-18)

Configuration Single

FET-Type N-Channel

Power-Max 300mW

Breakdown voltage For diodes, the breakdown voltage is the minimum reverse voltage that makes the diode conduct appreciably in reverse. Some devices (such as TRIACs) also have a forward breakdown voltage.

50V VDSS â€“ Drain-Source Voltage

- Current-Drain-Idss-Vds-Vgs=0

500Î¼A @ 15V Current-Drain-Id-Max

- Voltage-Cutoff-VGS-off-Id

600mV @ 100nA Input Capacitance

7pF @ 15V Resistance-RDS-On

- Transistor-Polarity

N-Channel Vgs-Gate-Source-Breakdown-Voltage

Product Details

DESCRIPTION

The 2N4338/4339/4340/4341 n-channel JFETs are designed for sensitive amplifier stages at low- to mid-frequencies. Low cut-off voltages accommodate low-level power supplies and low leakage for improved system accuracy.

FEATURES

â— Low Cutoff Voltage: 2N4338 <1 V
â— High Input Impedance
â— Very Low Noise
â— High Gain: AV = 80 @ 20 A

BENEFITS

â— Full Performance from Low-Voltage Power Supply: Down to 1 V
â— Low Signal Loss/System Error
â— High System Sensitivity
â— High-Quality Low-Level Signal Amplification

APPLICATIONS

â— High-Gain, Low-Noise Amplifiers
â— Low-Current, Low-Voltage Battery-Powered Amplifiers
â— Infrared Detector Amplifiers
â— Ultrahigh Input Impedance Pre-Amplifiers

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Mfr. Part #: 2N4339-E3