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2N4339

JFET JFET N-Channel -40V Low Noise

Product Category: JFETs
Mfr. Part #
2N4339
Manufacturer: InterFET
Package: Bulk
Lead Free Status /RoHS Status:
Data Sheet: 2N4339 Datasheet
Inventory: In Stock

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Mfr. Part #: 2N4339

Specifications
Product Details

Specifications

Manufacturer InterFET

Technology Si

Mounting Style Through Hole

Package / Case TO-18-3

Transistor Polarity N-Channel

Configuration Single

Vds - Drain-Source Breakdown Voltage 15 V

Vgs - Gate-Source Breakdown Voltage - 50 V

Gate-Source Cutoff Voltage - 1.8 V

Drain-Source Current at Vgs=0 1.5 mA

Id - Continuous Drain Current 100 pA

Rds On - Drain-Source Resistance 1.7 kOhms

Pd - Power Dissipation 300 mW

Series 2N43

Packaging Bulk

Type JFET

Brand InterFET

Forward Transconductance - Min 800 uS

Product Type JFETs

Standard Pack Qty 1

Subcategory Transistors

Product Details

DESCRIPTION

The 2N4338/4339/4340/4341 n-channel JFETs are designed for sensitive amplifier stages at low- to mid-frequencies. Low cut-off voltages accommodate low-level power supplies and low leakage for improved system accuracy.
The TO-206AA (TO-18) package is hermetically sealed and suitable for military processing (see Military Information). For similar products in TO-226AA (TO-92) and TO-236 (SOT-23) packages, see the J/SST201 series data sheet.

FEATURES

â— Low Cutoff Voltage: 2N4338 <1 V
â— High Input Impedance
â— Very Low Noise
â— High Gain: AV = 80 @ 20 Î¼A

APPLICATIONS

â— High-Gain, Low-Noise Amplifiers
â— Low-Current, Low-Voltage Battery-Powered Amplifiers
â— Infrared Detector Amplifiers
â— Ultrahigh Input Impedance Pre-Amplifiers

BENEFITS

â— Full Performance from Low-Voltage Power Supply: Down to 1 V
â— Low Signal Loss/System Error
â— High System Sensitivity
â— High-Quality Low-Level Signal Amplification

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Mfr. Part #: 2N4339