wholesale 2N5210 TRA TIN/LEAD BJTs - Bipolar Transistors supplier,manufacturer,distributor

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2N5210-TRA-TL

Bipolar Transistors - BJT NPN 50Vceo 50Vcbo 4.5Vebo 50mA 350mW

Product Category: BJTs - Bipolar Transistors
Mfr. Part #
2N5210 TRA TIN/LEAD
Manufacturer: Central Semiconductor
Package: Reel
Lead Free Status /RoHS Status:
Data Sheet: 2N5210 TRA TIN/LEAD Datasheet
Inventory: In Stock

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Mfr. Part #: 2N5210 TRA TIN/LEAD

Specifications

Specifications

Manufacturer Central Semiconductor

Mounting Style Through Hole

Package / Case TO-92-3

Transistor Polarity NPN

Configuration Single

Collector- Emitter Voltage VCEO Max 50 V

Collector- Base Voltage VCBO 50 V

Emitter- Base Voltage VEBO 4.5 V

Collector-Emitter Saturation Voltage 700 mV

Pd - Power Dissipation 1 W

Gain Bandwidth Product fT 30 MHz

Minimum Operating Temperature - 65 C

Maximum Operating Temperature + 150 C

Series 2N5210

Packaging Reel

DC Current Gain hFE Max 600 at 5 V, 100 uA

Technology Si

Brand Central Semiconductor

Continuous Collector Current 50 mA

DC Collector/Base Gain hfe Min 250 at 5 V, 1 mA

Product Type BJTs - Bipolar Transistors

Standard Pack Qty 2000

Subcategory Transistors

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Mfr. Part #: 2N5210 TRA TIN/LEAD