wholesale 2N5416 TIN/LEAD BJTs - Bipolar Transistors supplier,manufacturer,distributor

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2N5416-TL

Bipolar Transistors - BJT PNP 350Vcbo 300Vceo 6.0Vebo 1.0W

Product Category: BJTs - Bipolar Transistors
Mfr. Part #
2N5416 TIN/LEAD
Manufacturer: Central Semiconductor
Package: Bulk
Lead Free Status /RoHS Status:
Data Sheet: 2N5416 TIN/LEAD Datasheet
Inventory: In Stock

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Mfr. Part #: 2N5416 TIN/LEAD

Specifications

Specifications

Manufacturer Central Semiconductor

Mounting Style Through Hole

Package / Case TO-39-3

Transistor Polarity PNP

Configuration Single

Collector- Emitter Voltage VCEO Max 300 V

Collector- Base Voltage VCBO 350 V

Emitter- Base Voltage VEBO 6 V

Collector-Emitter Saturation Voltage 2 V

Maximum DC Collector Current -

Pd - Power Dissipation 1 W

Gain Bandwidth Product fT 15 MHz

Minimum Operating Temperature - 65 C

Maximum Operating Temperature + 200 C

Series 2N5416

Packaging Bulk

DC Current Gain hFE Max 120 at 50 mA, 10 V

Technology Si

Brand Central Semiconductor

Continuous Collector Current 1 A

DC Collector/Base Gain hfe Min 30 at 50 mA, 10 V

Product Type BJTs - Bipolar Transistors

Standard Pack Qty 500

Subcategory Transistors

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Mfr. Part #: 2N5416 TIN/LEAD