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2N5460_D27Z

JFETs 40V P-Channel Through Hole 350mW TO-92-3

Product Category: JFETs
Mfr. Part #
2N5460_D27Z
Manufacturer: onsemi
Package: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Lead Free Status /RoHS Status:
Data Sheet: 2N5460_D27Z Datasheet
Inventory: In Stock

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Mfr. Part #: 2N5460_D27Z

Specifications
Product Details

Specifications

Manufacturer onsemi

Product Category JFETs

Series -

Packaging Tape & Reel (TR)

Package-Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Mounting-Type Through Hole

Supplier-Device-Package TO-92-3

FET-Type P-Channel

Power-Max 350mW

Breakdown voltage For diodes, the breakdown voltage is the minimum reverse voltage that makes the diode conduct appreciably in reverse. Some devices (such as TRIACs) also have a forward breakdown voltage.

40V VDSS â€“ Drain-Source Voltage

- Current-Drain-Idss-Vds-Vgs=0

1mA @ 15V Current-Drain-Id-Max

- Voltage-Cutoff-VGS-off-Id

750mV @ 1Î¼A Input Capacitance

7pF @ 15V Resistance-RDS-On

Product Details

P-Channel General Purpose Amplifier

This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.

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Mfr. Part #: 2N5460_D27Z