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2N5639

JFETs 35V N-Channel Through Hole 310mW 60 Ohm TO-92-3

  • JFETs
  • 2N5639
  • onsemi
  • TO-226-3, TO-92-3 (TO-226AA)
  • 2N5639 Datasheet
  • In Stock
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Mfr. Part #: 2N5639

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  • Specifications
  • Product Details

Specifications

Manufacturer onsemi
Product Category JFETs
Series -
Packaging Bulk
Package-Case TO-226-3, TO-92-3 (TO-226AA)
Mounting-Type Through Hole
Supplier-Device-Package TO-92-3
FET-Type N-Channel
Power-Max 310mW
Breakdown voltage For diodes, the breakdown voltage is the minimum reverse voltage that makes the diode conduct appreciably in reverse. Some devices (such as TRIACs) also have a forward breakdown voltage.
35V VDSS – Drain-Source Voltage
30V Current-Drain-Idss-Vds-Vgs=0
25mA @ 20V Current-Drain-Id-Max
- Voltage-Cutoff-VGS-off-Id
- Input Capacitance
10pF @ 12V (VGS) Resistance-RDS-On

Product Details

JFET Chopper Transistors

N–Channel – Depletion

N–Channel Junction Field Effect Transistors, depletion mode (Type A) designed for chopper and high–speed switching applications.

• Low Drain–Source “ON” Resistance:

RDS(on) = 30Ω for 2N5638
RDS(on) = 60Ω for 2N5639
• Low Reverse Transfer Capacitance
Crss = 4.0 pF (Max) @ f = 1.0 MHz
• Fast Switching Characteristics
tr = 5.0 ns (Max) (2N5638)

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the 2N5639. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: 2N5639

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