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2N5639G

JFETs 35V N-Channel Through Hole 310mW 60 Ohm TO-92-3

Product Category: JFETs
Mfr. Part #
2N5639G
Manufacturer: onsemi
Package: TO-226-3, TO-92-3 Long Body
Lead Free Status /RoHS Status:
Data Sheet: 2N5639G Datasheet
Inventory: In Stock

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Mfr. Part #: 2N5639G

Specifications
Product Details

Specifications

Manufacturer onsemi

Product Category JFETs

Series -

Packaging Bulk

Package-Case TO-226-3, TO-92-3 (TO-226AA)

Mounting-Type Through Hole

Supplier-Device-Package TO-92-3

FET-Type N-Channel

Power-Max 310mW

Breakdown voltage For diodes, the breakdown voltage is the minimum reverse voltage that makes the diode conduct appreciably in reverse. Some devices (such as TRIACs) also have a forward breakdown voltage.

35V VDSS â€“ Drain-Source Voltage

30V Current-Drain-Idss-Vds-Vgs=0

25mA @ 20V Current-Drain-Id-Max

- Voltage-Cutoff-VGS-off-Id

- Input Capacitance

10pF @ 12V (VGS) Resistance-RDS-On

Product Details

JFET Chopper Transistors

Nâˆ’Channel âˆ’ Depletion

Nâˆ’Channel Junction Field Effect Transistors, depletion mode (Type A) designed for chopper and highâˆ’speed switching applications.

Features

â€¢ Low Drainâˆ’Source â€œONâ€ Resistance:
RDS(on) = 30 for 2N5638
RDS(on) = 60 for 2N5639
â€¢ Low Reverse Transfer Capacitance âˆ’
Crss = 4.0 pF (Max) @ f = 1.0 MHz
â€¢ Fast Switching Characteristics âˆ’ tr = 5.0 ns (Max) (2N5638)
â€¢ Pbâˆ’Free Packages are Available*

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Mfr. Part #: 2N5639G