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2N5643

RF Bipolar Transistors RF Transistor

  • Transistors RF
  • 2N5643
  • Advanced Semiconductor, Inc.
  • Tray
  • 2N5643 Datasheet
  • In Stock
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Mfr. Part #: 2N5643

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  • Specifications

Specifications

Manufacturer Advanced Semiconductor, Inc.
RoHS
Transistor Type Bipolar Power
Technology Si
Transistor Polarity NPN
Operating Frequency 175 MHz
DC Collector/Base Gain hfe Min 5
Collector- Emitter Voltage VCEO Max 35 V
Emitter- Base Voltage VEBO 4 V
Continuous Collector Current 5 A
Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 200 C
Mounting Style Through Hole
Package / Case MT72
Packaging Tray
RF & Wireless RF Bipolar Transistors
Type RF Bipolar Power
Brand Advanced Semiconductor, Inc.
Gain Bandwidth Product fT 200 MHz
Pd - Power Dissipation 60 W
Product Type RF Bipolar Transistors
Standard Pack Qty 1
Subcategory Transistors

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Mfr. Part #: 2N5643

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