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2N5770

RF BJT 50mA 900MHz 15dB Through Hole 350mW TO-92-3 NPN 15V

Product Category: RF Transistors (BJT)
Mfr. Part #
2N5770
Manufacturer: onsemi
Package: TO-226-3, TO-92-3 (TO-226AA)
Lead Free Status /RoHS Status:
Data Sheet: 2N5770 Datasheet
Inventory: In Stock

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Mfr. Part #: 2N5770

Specifications

Specifications

Manufacturer onsemi

Product Category RF Transistors (BJT)

Series 2N5770

Packaging Bulk

Part-Aliases TR

Unit-Weight 0.016000 oz

Mounting-Style Through Hole

Package-Case TO-226-3, TO-92-3 (TO-226AA)

Mounting-Type Through Hole

Supplier-Device-Package TO-92-3

Configuration Single

Power-Max 350mW

Transistor-Type NPN

Electric current collectors 50mA

Voltage-Collector-Emitter-Breakdown-Max 15V

DC-Current-Gain-hFE-Min-Ic-Vce 50 @ 8mA, 10V

Frequency-Transition 900MHz

Noise-Figure-dB-Typ-f 6dB @ 60MHz

Gain 15dB

Pd-Power-Dissipation 625 mW

Maximum Operating Temperature + 150 C

Operating temperature range - 65 C

Collector-Emitter-Voltage-VCEO-Max 15 V

Transistor-Polarity NPN

Collector-Emitter-Saturation-Voltage 0.4 V

Collector-Base-Voltage-VCBO 30 V

Emitter-Base-Voltage-VEBO 3 V

Maximum-DC-Collector-Current 0.05 A

Gain-Bandwidth-Product-fT 900 MHz

Continuous-Collector-Current 50 mA

DC-Collector-Base-Gain-hfe-Min 20

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Mfr. Part #: 2N5770