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2N5884G

BJT Single 80 V + 150 C 25 A Through Hole TO-204AA, TO-3 200 W 2N5884 PNP

Product Category: Transistors (BJT) - Single
Mfr. Part #
2N5884G
Manufacturer: onsemi
Package: TO-204AA, TO-3
Lead Free Status /RoHS Status:
Data Sheet: 2N5884G Datasheet
Inventory: In Stock

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Mfr. Part #: 2N5884G

Specifications
Product Details

Specifications

Manufacturer onsemi

Product Category Transistors (BJT) - Single

Series 2N5884

Packaging Tray

Mounting-Style Through Hole

Package-Case TO-204AA, TO-3

Mounting-Type Through Hole

Supplier-Device-Package TO-3

Configuration Single

Power-Max 200W

Transistor-Type PNP

Electric current collectors 25A

Voltage-Collector-Emitter-Breakdown-Max 80V

DC-Current-Gain-hFE-Min-Ic-Vce 20 @ 10A, 4V

Vce saturation 4V @ 6.25A, 25A

Current-Collector-Cutoff-Max 2mA

Frequency-Transition 4MHz

Pd-Power-Dissipation 200 W

Maximum Operating Temperature + 150 C

Operating temperature range - 65 C

Collector-Emitter-Voltage-VCEO-Max 80 V

Transistor-Polarity PNP

Collector-Emitter-Saturation-Voltage 1 V

Collector-Base-Voltage-VCBO 80 V

Emitter-Base-Voltage-VEBO 5 V

Maximum-DC-Collector-Current 25 A

Gain-Bandwidth-Product-fT 4 MHz

Continuous-Collector-Current 25 A

DC-Collector-Base-Gain-hfe-Min 20

Product Details

Complementary silicon highâˆ’power transistors are designed for generalâˆ’purpose power amplifier and switching applications.

Features

â€¢ Low Collectorâˆ’Emitter Saturation Voltage âˆ’
VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc
â€¢ Low Leakage Current
ICEX = 1.0 mAdc (max) at Rated Voltage
â€¢ Excellent DC Current Gain âˆ’
hFE = 20 (min) at IC = 10 Adc
â€¢ High Current Gain Bandwidth Product âˆ’
f = 4.0 MHz (min) at IC = 1.0 Adc
â€¢ Pbâˆ’Free Packages are Available*

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Mfr. Part #: 2N5884G