wholesale 2SC5010-T1-A RF Transistors (BJT) supplier,manufacturer,distributor

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2SC5010-T1-A

RF BJT 30mA 12GHz 8.5dB Surface Mount 125mW SOT-523 NPN 6V

  • RF Transistors (BJT)
  • 2SC5010-T1-A
  • CEL
  • SOT-523
  • 2SC5010-T1-A Datasheet
  • In Stock
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Mfr. Part #: 2SC5010-T1-A

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  • Specifications
  • Product Details

Specifications

Manufacturer CEL
Product Category RF Transistors (BJT)
Series -
Packaging Alternate Packaging
Part-Aliases NE68519-T1-A
Mounting-Style SMD/SMT
Package-Case SOT-523
Mounting-Type Surface Mount
Supplier-Device-Package SOT-523
Power-Max 125mW
Transistor-Type NPN
Electric current collectors 30mA
Voltage-Collector-Emitter-Breakdown-Max 6V
DC-Current-Gain-hFE-Min-Ic-Vce 75 @ 10mA, 3V
Frequency-Transition 12GHz
Noise-Figure-dB-Typ-f 1.5dB @ 2GHz
Gain 8.5dB

Product Details

DESCRIPTION

The NE68519 / 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is a proprietary fabrication technique.

FEATURES

• Low Voltage Use.
• High fT : 12.0 GHz TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz)
• Low Cre : 0.4 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)
• Low NF : 1.5 dB TYP. (@ VCE = 3 V, IC = 3 mA, f = 2 GHz)
• High |S21e|2 : 8.5 dB TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz)
• Ultra Super Mini Mold Package.

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the 2SC5010-T1-A. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: 2SC5010-T1-A

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