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2SC5010-T1
- Product Category: RF Transistors (BJT)
- Mfr. Part # 2SC5010-T1
- Package: 0603-3
- Lead Free Status /RoHS Status:
- Data Sheet: 2SC5010-T1 Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
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Mfr. Part #: 2SC5010-T1
- Product Details
Product Details
DESCRIPTION
The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an NEC proprietary fabrication technique.FEATURES
• Low Voltage Use.• High fT : 12.0 GHz TYP. (@ VCE= 3 V, IC= 10 mA, f = 2 GHz)
• Low Cre : 0.4 pF TYP. (@ VCE= 3 V, IE= 0, f = 1 MHz)
• Low NF : 1.5 dB TYP. (@ VCE= 3 V, IC= 3 mA, f = 2 GHz)
• High |S21e|2: 8.5 dB TYP. (@ VCE= 3 V, IC= 10 mA, f = 2 GHz)
• Ultra Super Mini Mold Package.
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the 2SC5010-T1. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
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Please send inquiry, we will respond immediately.
Mfr. Part #: 2SC5010-T1
