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2SK3476TE12LQ

RF MOSFET Transistors N-Ch Radio Freq 1A 3W 20V VDSS

Product Category: Transistors RF
Mfr. Part #
2SK3476(TE12L,Q)
Manufacturer: Toshiba
Package: Cut Tape/Reel
Lead Free Status /RoHS Status:
Data Sheet: 2SK3476(TE12L,Q) Datasheet
Inventory: In Stock

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Mfr. Part #: 2SK3476(TE12L,Q)

Specifications

Specifications

Manufacturer Toshiba

Transistor Polarity N-Channel

Technology Si

Id - Continuous Drain Current 3 A

Vds - Drain-Source Breakdown Voltage 20 V

Rds On - Drain-Source Resistance -

Operating Frequency 520 MHz

Gain 11.4 dB

Output Power 7 W

Minimum Operating Temperature -

Maximum Operating Temperature + 150 C

Mounting Style SMD/SMT

Package / Case PW-X-4

Packaging Cut Tape

Packaging Reel

RF & Wireless RF MOSFET Transistors

Configuration Single

Series 2SK3476

Type RF Power MOSFET

Brand Toshiba

Pd - Power Dissipation 20 W

Product Type RF MOSFET Transistors

Standard Pack Qty 1000

Subcategory MOSFETs

Vgs - Gate-Source Voltage 10 V

Vgs th - Gate-Source Threshold Voltage 1.05 V

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Mfr. Part #: 2SK3476(TE12L,Q)