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2SK3666-4-TB-E

JFETs 30V 10mA N-Channel Surface Mount 200mW 200 Ohm 3-CP

  • JFETs
  • 2SK3666-4-TB-E
  • onsemi
  • TO-236-3, SC-59, SOT-23-3
  • 2SK3666-4-TB-E Datasheet
  • In Stock
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Mfr. Part #: 2SK3666-4-TB-E

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  • Specifications
  • Product Details

Specifications

Manufacturer onsemi
Product Category JFETs
Series -
Packaging Tape & Reel (TR)
Package-Case TO-236-3, SC-59, SOT-23-3
Mounting-Type Surface Mount
Supplier-Device-Package 3-CP
FET-Type N-Channel
Power-Max 200mW
Breakdown voltage For diodes, the breakdown voltage is the minimum reverse voltage that makes the diode conduct appreciably in reverse. Some devices (such as TRIACs) also have a forward breakdown voltage.
30V VDSS – Drain-Source Voltage
30V Current-Drain-Idss-Vds-Vgs=0
2.5mA @ 10V Current-Drain-Id-Max
10mA Voltage-Cutoff-VGS-off-Id
180mV @ 1μA Input Capacitance
4pF @ 10V Resistance-RDS-On

Product Details

FET GaAs Channel N / 5V, 150mA, 8GHz

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the 2SK3666-4-TB-E. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: 2SK3666-4-TB-E

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