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2SK3796-3-TL-E

JFETs 10mA N-Channel Surface Mount 100mW 200 Ohm 2SK3796 SMCP

  • JFETs
  • 2SK3796-3-TL-E
  • onsemi
  • TO-236-3, SC-59, SOT-23-3
  • 2SK3796-3-TL-E Datasheet
  • In Stock
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Mfr. Part #: 2SK3796-3-TL-E

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  • Specifications
  • Product Details

Specifications

Manufacturer onsemi
Product Category JFETs
Series 2SK3796
Packaging Alternate Packaging
Package-Case SC-75, SOT-416
Mounting-Type Surface Mount
Supplier-Device-Package SMCP
Configuration Single
FET-Type N-Channel
Power-Max 100mW
Breakdown voltage For diodes, the breakdown voltage is the minimum reverse voltage that makes the diode conduct appreciably in reverse. Some devices (such as TRIACs) also have a forward breakdown voltage.
- VDSS – Drain-Source Voltage
30V Current-Drain-Idss-Vds-Vgs=0
1.2mA @ 10V Current-Drain-Id-Max
10mA Voltage-Cutoff-VGS-off-Id
180mV @ 1μA Input Capacitance
4pF @ 10V Resistance-RDS-On
200 Ohm Pd-Power-Dissipation
100 mW ID (drain current)
10 mA Vds-Drain-Source-Breakdown-Voltage
30 V Rds-On-Drain-Source-Resistance
200 Ohms Transistor-Polarity
N-Channel Transconductance
Transadmittance (or transfer admittance) is the AC equivalent of transconductance. 3 mS to 6.5 mS
Vgs-Gate-Source-Breakdown-Voltage - 30 V
Drain-to-Source-Voltage-Vdss 6 mA
Gate-Source-Cutoff-Voltage - 0.95 V

Product Details

Low-Frequency General-Purpose Amplifier, Impedance Converter Applications

Features

• Small IGSS
• Small Ciss

Applications

• Low-frequency general-purpose amplifier, impedance conversion, analog switches applications

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the 2SK3796-3-TL-E. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: 2SK3796-3-TL-E

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