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3SK293TE85LF

RF MOSFET Transistors N-Ch High Freq 30mA 0.1W 12.5V

  • Transistors RF
  • 3SK293(TE85L,F)
  • Toshiba
  • Cut Tape/Reel
  • 3SK293(TE85L,F) Datasheet
  • In Stock
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Mfr. Part #: 3SK293(TE85L,F)

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  • Specifications

Specifications

Manufacturer Toshiba
RoHS
Transistor Polarity N-Channel
Technology Si
Id - Continuous Drain Current 30 mA
Vds - Drain-Source Breakdown Voltage 12.5 V
Rds On - Drain-Source Resistance -
Operating Frequency 800 MHz
Gain 22.5 dB
Output Power -
Minimum Operating Temperature -
Maximum Operating Temperature + 125 C
Mounting Style SMD/SMT
Package / Case SOT-343-4
Packaging Cut Tape
Packaging Reel
RF & Wireless RF MOSFET Transistors
Configuration Dual
Series 3SK293
Type RF Small Signal MOSFET
Brand Toshiba
Pd - Power Dissipation 100 mW
Product Type RF MOSFET Transistors
Standard Pack Qty 3000
Subcategory MOSFETs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the 3SK293TE85LF. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: 3SK293(TE85L,F)

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