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A2G26H281-04SR3

RF JFET Transistors Airfast RF Power GaN Transistor, 2496-2690 MHz, 50 W Avg., 48 V

Product Category: RF JFET Transistors
Mfr. Part #
A2G26H281-04SR3
Manufacturer: NXP
Package: Reel
Lead Free Status /RoHS Status:
Data Sheet: A2G26H281-04SR3 Datasheet
Inventory: In Stock

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Mfr. Part #: A2G26H281-04SR3

Specifications

Specifications

Manufacturer NXP

Technology GaN

Operating Frequency 2496 MHz to 2690 MHz

Gain 14.2 dB

Transistor Polarity N-Channel

Vds - Drain-Source Breakdown Voltage 125 V

Vgs - Gate-Source Breakdown Voltage - 8 V, 0 V

Output Power 50 W

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Mounting Style SMD/SMT

Package / Case NI-780S-4

Packaging Reel

RF & Wireless RF JFET Transistors

Configuration Dual

Brand NXP Semiconductors

Product Type RF JFET Transistors

Standard Pack Qty 250

Subcategory Transistors

Vgs th - Gate-Source Threshold Voltage - 2.3 V

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Mfr. Part #: A2G26H281-04SR3