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A2T08VD020NT1

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 720-960 MHz, 2 W Avg., 48 V

Product Category: Transistors RF
Mfr. Part #
A2T08VD020NT1
Manufacturer: NXP
Package: Cut Tape/Reel
Lead Free Status /RoHS Status:
Data Sheet: A2T08VD020NT1 Datasheet
Inventory: In Stock

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Mfr. Part #: A2T08VD020NT1

Specifications

Specifications

Manufacturer NXP

Transistor Polarity N-Channel

Technology Si

Id - Continuous Drain Current 64 mA

Vds - Drain-Source Breakdown Voltage - 500 mV, 105 V

Rds On - Drain-Source Resistance -

Operating Frequency 728 MHz to 960 MHz

Gain 19.1 dB

Output Power 2 W

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Mounting Style SMD/SMT

Package / Case PQFN-24

Packaging Cut Tape

Packaging Reel

RF & Wireless RF MOSFET Transistors

Series A2T08VD020

Transistor Type LDMOS FET

Type RF Power MOSFET

Brand NXP Semiconductors

Number of Channels 2 Channel

Product Type RF MOSFET Transistors

Standard Pack Qty 1000

Subcategory MOSFETs

Vgs - Gate-Source Voltage - 6 V, 10 V

Vgs th - Gate-Source Threshold Voltage 1.8 V

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Mfr. Part #: A2T08VD020NT1