wholesale A2T27S020NR1 RF MOSFET Transistors supplier,manufacturer,distributor

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A2T27S020NR1

RF MOSFET Transistors Airfast RF Power LDMOS Transistor 400-2700 MHz, 2.5 W Avg., 28 V

  • RF MOSFET Transistors
  • A2T27S020NR1
  • NXP
  • Cut Tape/Reel
  • A2T27S020NR1 Datasheet
  • In Stock
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Mfr. Part #: A2T27S020NR1

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  • Specifications

Specifications

Manufacturer NXP
RoHS
Transistor Polarity N-Channel
Technology Si
Id - Continuous Drain Current 242 mA
Vds - Drain-Source Breakdown Voltage 65 V
Rds On - Drain-Source Resistance -
Operating Frequency 400 MHz to 2.7 GHz
Gain 21 dB
Output Power 2.5 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Mounting Style Flange Mount
Packaging Cut Tape
Packaging Reel
RF & Wireless RF MOSFET Transistors
Series A2T27S020
Transistor Type LDMOS FET
Type RF Power MOSFET
Brand NXP Semiconductors
Moisture Sensitive Yes
Product Type RF MOSFET Transistors
Standard Pack Qty 500
Subcategory MOSFETs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the A2T27S020NR1. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: A2T27S020NR1

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