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A2V07H525-04NR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 595-851 MHz, 120 W Avg., 48 V

Product Category: Transistors RF
Mfr. Part #
A2V07H525-04NR6
Manufacturer: NXP
Package: Reel
Lead Free Status /RoHS Status:
Data Sheet: A2V07H525-04NR6 Datasheet
Inventory: In Stock

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Mfr. Part #: A2V07H525-04NR6

Specifications

Specifications

Manufacturer NXP

Transistor Polarity Dual N-Channel

Technology Si

Id - Continuous Drain Current 2.8 A

Vds - Drain-Source Breakdown Voltage - 500 mV, 105 V

Operating Frequency 595 MHz to 851 MHz

Gain 17.5 dB

Output Power 120 W

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Mounting Style SMD/SMT

Package / Case OM-1230-4L

Packaging Reel

RF & Wireless RF MOSFET Transistors

Series A2V07H525-04

Transistor Type LDMOS FET

Type RF Power MOSFET

Brand NXP Semiconductors

Number of Channels 2 Channel

Moisture Sensitive Yes

Product Type RF MOSFET Transistors

Standard Pack Qty 150

Subcategory MOSFETs

Vgs - Gate-Source Voltage - 6 V, 10 V

Vgs th - Gate-Source Threshold Voltage 1.3 V

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Mfr. Part #: A2V07H525-04NR6