wholesale A3G22H400-04SR3 RF MOSFET Transistors supplier,manufacturer,distributor

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A3G22H400-04SR3

RF MOSFET Transistors RF Power GaN Trnsitr 1805-2200 MHz 79W48

  • RF MOSFET Transistors
  • A3G22H400-04SR3
  • NXP
  • Reel
  • A3G22H400-04SR3 Datasheet
  • In Stock
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Mfr. Part #: A3G22H400-04SR3

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  • Specifications

Specifications

Manufacturer NXP
RoHS
Transistor Polarity Dual N-Channel
Technology GaN-on-Si
Id - Continuous Drain Current 29.7 mA
Vds - Drain-Source Breakdown Voltage 150 V
Operating Frequency 1800 MHz to 2200 MHz
Gain 15.3 dB
Output Power 79 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Mounting Style SMD/SMT
Package / Case NI-780S-4
Packaging Reel
RF & Wireless RF MOSFET Transistors
Series A3G22H400
Type RF Power MOSFET
Brand NXP Semiconductors
Number of Channels 2 Channel
Product Type RF MOSFET Transistors
Standard Pack Qty 250
Subcategory MOSFETs
Vgs - Gate-Source Voltage - 8 V
Vgs th - Gate-Source Threshold Voltage - 2.3 V

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the A3G22H400-04SR3. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: A3G22H400-04SR3

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