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A3T18H400W23SR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 71 W Avg., 28 V

  • Transistors RF
  • A3T18H400W23SR6
  • NXP
  • Reel
  • A3T18H400W23SR6 Datasheet
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Mfr. Part #: A3T18H400W23SR6

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  • Specifications

Specifications

Manufacturer NXP
RoHS
Transistor Polarity Dual N-Channel
Technology Si
Id - Continuous Drain Current 3.2 A
Vds - Drain-Source Breakdown Voltage - 500 mV, 65 V
Operating Frequency 1.805 GHz to 1.88 GHz
Gain 16.8 dB
Output Power 71 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Mounting Style SMD/SMT
Package / Case ACP-1230S-4L2S
Packaging Reel
RF & Wireless RF MOSFET Transistors
Series A3T18H400W23
Transistor Type LDMOS FET
Type RF Power MOSFET
Brand NXP Semiconductors
Number of Channels 2 Channel
Product Type RF MOSFET Transistors
Standard Pack Qty 150
Subcategory MOSFETs
Vgs - Gate-Source Voltage - 6 V, 10 V
Vgs th - Gate-Source Threshold Voltage 1.3 V

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Mfr. Part #: A3T18H400W23SR6

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