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A3T18H455W23SR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 87 W Avg., 30 V

Product Category: Transistors RF
Mfr. Part #
A3T18H455W23SR6
Manufacturer: NXP
Package: Reel
Lead Free Status /RoHS Status:
Data Sheet: A3T18H455W23SR6 Datasheet
Inventory: In Stock

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Mfr. Part #: A3T18H455W23SR6

Specifications

Specifications

Manufacturer NXP

Transistor Polarity Dual N-Channel

Technology Si

Id - Continuous Drain Current 3.6 A

Vds - Drain-Source Breakdown Voltage - 500 mV, 65 V

Operating Frequency 1.805 GHz to 1.88 GHz

Gain 16.7 dB

Output Power 87 W

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Mounting Style SMD/SMT

Package / Case ACP-1230S-4L2S

Packaging Reel

RF & Wireless RF MOSFET Transistors

Series A3T18H455W23

Transistor Type LDMOS FET

Type RF Power MOSFET

Brand NXP Semiconductors

Number of Channels 2 Channel

Product Type RF MOSFET Transistors

Standard Pack Qty 150

Subcategory MOSFETs

Vgs - Gate-Source Voltage - 6 V, 10 V

Vgs th - Gate-Source Threshold Voltage 1.4 V

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Mfr. Part #: A3T18H455W23SR6