wholesale A3T19H455W23SR6 Transistors RF supplier,manufacturer,distributor

Image is for illustrative purposes only. Please refer to product description.

A3T19H455W23SR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1930-1990 MHz, 81 W Avg., 30 V

  • Transistors RF
  • A3T19H455W23SR6
  • NXP
  • Reel
  • A3T19H455W23SR6 Datasheet
  • In Stock
  • Unit Price:
    Inquiry
  • Quantity:
    -
    +

Please send inquiry,we will respond immediately.

Mfr. Part #: A3T19H455W23SR6

*
*
*
Upload Your BOM File

CSV or Excel file format only. Max file size: 2Mb

empty-product
  • Specifications

Specifications

Manufacturer NXP
RoHS
Transistor Polarity Dual N-Channel
Technology Si
Id - Continuous Drain Current 3.6 A
Vds - Drain-Source Breakdown Voltage - 500 mV, 65 V
Operating Frequency 1.93 GHz to 1.99 GHz
Gain 16.4 dB
Output Power 81 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Mounting Style SMD/SMT
Package / Case ACP-1230S-4L2S
Packaging Reel
RF & Wireless RF MOSFET Transistors
Series A3T19H455W23
Transistor Type LDMOS FET
Type RF Power MOSFET
Brand NXP Semiconductors
Number of Channels 2 Channel
Product Type RF MOSFET Transistors
Standard Pack Qty 150
Subcategory MOSFETs
Vgs - Gate-Source Voltage - 6 V, 10 V
Vgs th - Gate-Source Threshold Voltage 1.4 V

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the A3T19H455W23SR6. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

READ MORE

Please send inquiry, we will respond immediately.

Mfr. Part #: A3T19H455W23SR6

*
*
*
Upload Your BOM File

CSV or Excel file format only. Max file size: 2Mb

empty-product

Copyright © 2024 ICCHIPS ELECTRONICS PTE.LTD. All right Reserved.

PayPalWestern UnionUPSDHLFedExEMSTNTaramex