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A3T23H300W23SR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 63 W Avg., 30 V

Product Category: Transistors RF
Mfr. Part #
A3T23H300W23SR6
Manufacturer: NXP
Package: Cut Tape/Reel
Lead Free Status /RoHS Status:
Data Sheet: A3T23H300W23SR6 Datasheet
Inventory: In Stock

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Mfr. Part #: A3T23H300W23SR6

Specifications

Specifications

Manufacturer NXP

Transistor Polarity Dual N-Channel

Technology Si

Id - Continuous Drain Current 3.2 A

Vds - Drain-Source Breakdown Voltage - 5 V, 65 V

Rds On - Drain-Source Resistance -

Operating Frequency 2.3 GHz to 2.4 GHz

Gain 15.6 dB

Output Power 63 W

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Mounting Style SMD/SMT

Package / Case ACP-1230S-4L2S

Packaging Cut Tape

Packaging Reel

RF & Wireless RF MOSFET Transistors

Series A3T23H300W23

Transistor Type LDMOS FET

Type RF Power MOSFET

Brand NXP Semiconductors

Number of Channels 2 Channel

Product Type RF MOSFET Transistors

Standard Pack Qty 150

Subcategory MOSFETs

Vgs - Gate-Source Voltage - 6 V, 10 V

Vgs th - Gate-Source Threshold Voltage 1.3 V

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Mfr. Part #: A3T23H300W23SR6