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A5G35H120NT2

RF MOSFET Transistors Airfast RF Power GaN Transistor, 3300 3800 MHz, 18 W Avg., 48 V

Product Category: Transistors RF
Mfr. Part #
A5G35H120NT2
Manufacturer: NXP
Package: Cut Tape/Reel
Lead Free Status /RoHS Status:
Data Sheet: A5G35H120NT2 Datasheet
Inventory: In Stock

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Mfr. Part #: A5G35H120NT2

Specifications

Specifications

Manufacturer NXP

Transistor Polarity N-Channel

Technology GaN Si

Id - Continuous Drain Current 10 mA

Vds - Drain-Source Breakdown Voltage 125 V

Rds On - Drain-Source Resistance -

Operating Frequency 3.3 GHz to 3.7 GHz

Gain 14.1 dB

Output Power 18 W

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Mounting Style SMD/SMT

Package / Case DFN-10

Packaging Cut Tape

Packaging Reel

RF & Wireless RF MOSFET Transistors

Series A5G35H120N

Type RF Power MOSFET

Brand NXP Semiconductors

Number of Channels 1 Channel

Product Type RF MOSFET Transistors

Standard Pack Qty 2000

Subcategory MOSFETs

Vgs - Gate-Source Voltage - 8 V

Vgs th - Gate-Source Threshold Voltage - 4.6 V

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Mfr. Part #: A5G35H120NT2