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AFGHL75T65SQDC

IGBT Transistors IGBT with SiC copack diode IGBT - Hybrid IGBT 650 V

  • IGBT Transistors
  • AFGHL75T65SQDC
  • onsemi
  • Tube
  • AFGHL75T65SQDC Datasheet
  • In Stock
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Mfr. Part #: AFGHL75T65SQDC

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  • Specifications

Specifications

Manufacturer onsemi
RoHS
Technology SiC
Package / Case TO-247-3
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 650 V
Collector-Emitter Saturation Voltage 1.6 V
Maximum Gate Emitter Voltage - 20 V, 20 V
Continuous Collector Current at 25 C 80 A
Pd - Power Dissipation 375 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Packaging Tube
Continuous Collector Current Ic Max 80 A
Brand onsemi
Gate-Emitter Leakage Current 400 nA
Product Type IGBT Transistors
Standard Pack Qty 450
Subcategory IGBTs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the AFGHL75T65SQDC. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: AFGHL75T65SQDC

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