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AFIC10275NR5

RF MOSFET Transistors Airfast RF LDMOS Wideband Integrated Power Amplifier, 978-1090 MHz, 250 W Peak, 50 V

  • Transistors RF
  • AFIC10275NR5
  • NXP
  • Reel
  • AFIC10275NR5 Datasheet
  • In Stock
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Mfr. Part #: AFIC10275NR5

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  • Specifications

Specifications

Manufacturer NXP
RoHS
Transistor Polarity N-Channel
Technology Si
Id - Continuous Drain Current 1.6 A
Vds - Drain-Source Breakdown Voltage - 500 mV, 100 V
Operating Frequency 978 MHz to 1.09 GHz
Gain 32.1 dB
Output Power 250 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Mounting Style SMD/SMT
Package / Case TO-270WB-14
Packaging Reel
RF & Wireless RF MOSFET Transistors
Series AFIC10275
Transistor Type LDMOS FET
Type RF Power MOSFET
Brand NXP Semiconductors
Number of Channels 1 Channel
Product Type RF MOSFET Transistors
Standard Pack Qty 50
Subcategory MOSFETs
Vgs - Gate-Source Voltage - 6 V, 10 V
Vgs th - Gate-Source Threshold Voltage 1.3 V

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the AFIC10275NR5. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: AFIC10275NR5

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