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AFM906NT1

RF MOSFET Transistors Wideband Airfast RF Power LDMOS Transistor 136-941 MHz, 6.0 W, 7.5 V

Product Category: Transistors RF
Mfr. Part #
AFM906NT1
Manufacturer: NXP
Package: Cut Tape/Reel
Lead Free Status /RoHS Status:
Data Sheet: AFM906NT1 Datasheet
Inventory: In Stock

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Mfr. Part #: AFM906NT1

Specifications

Specifications

Manufacturer NXP

Transistor Polarity N-Channel

Technology Si

Id - Continuous Drain Current 4.7 A

Vds - Drain-Source Breakdown Voltage 30 V

Rds On - Drain-Source Resistance -

Operating Frequency 440 MHz to 520 MHz

Gain 16.2 dB

Output Power 6.5 W

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Mounting Style SMD/SMT

Package / Case HVSON-16

Packaging Cut Tape

Packaging Reel

RF & Wireless RF MOSFET Transistors

Series AFM906N

Transistor Type LDMOS FET

Type RF Power MOSFET

Brand NXP Semiconductors

Moisture Sensitive Yes

Product Type RF MOSFET Transistors

Standard Pack Qty 1000

Subcategory MOSFETs

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Please send inquiry, we will respond immediately.

Mfr. Part #: AFM906NT1