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AFT27S006NT1

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 728-3700 MHz, 28.8 dBm Avg., 28 V

Product Category: RF MOSFET Transistors
Mfr. Part #
AFT27S006NT1
Manufacturer: NXP
Package: Cut Tape/Reel
Lead Free Status /RoHS Status:
Data Sheet: AFT27S006NT1 Datasheet
Inventory: In Stock

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Mfr. Part #: AFT27S006NT1

Specifications
Product Details

Specifications

Manufacturer NXP

Transistor Polarity N-Channel

Technology Si

Id - Continuous Drain Current 77 mA

Vds - Drain-Source Breakdown Voltage 65 V

Rds On - Drain-Source Resistance -

Operating Frequency 728 MHz to 3.7 GHz

Gain 24.4 dB

Output Power 28.8 dBm

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Mounting Style SMD/SMT

Packaging Cut Tape

Packaging Reel

RF & Wireless RF MOSFET Transistors

Series AFT27S006N

Transistor Type LDMOS FET

Type RF Power MOSFET

Brand NXP Semiconductors

Moisture Sensitive Yes

Product Type RF MOSFET Transistors

Standard Pack Qty 1000

Subcategory MOSFETs

Product Details

1805â€“2170 MHz, 6.3 W AVG., 28 V

This 6.3 watt RF power LDMOS transistor is designed for cellular base

station applications covering the frequency range of 1805 to 2170 MHz.

Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 6.3 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 6.3 Watts Avg., Input Signal PAR = 9.9 dB @ 0 Probability on CCDF.

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Mfr. Part #: AFT27S006NT1