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AFT27S010NT1

RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, .7-3.6GHz 1.26

Product Category: Transistors RF
Mfr. Part #
AFT27S010NT1
Manufacturer: NXP
Package: Cut Tape/Reel
Lead Free Status /RoHS Status:
Data Sheet: AFT27S010NT1 Datasheet
Inventory: In Stock

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Mfr. Part #: AFT27S010NT1

Specifications
Product Details

Specifications

Manufacturer NXP

Transistor Polarity N-Channel

Technology Si

Id - Continuous Drain Current 90 mA

Vds - Drain-Source Breakdown Voltage - 500 mV, 65 V

Rds On - Drain-Source Resistance -

Operating Frequency 100 MHz to 3.6 GHz

Gain 21.7 dB

Output Power 1.26 W

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Mounting Style SMD/SMT

Package / Case PLD-1.5W

Packaging Cut Tape

Packaging Reel

RF & Wireless RF MOSFET Transistors

Series AFT27S010N

Transistor Type LDMOS FET

Type RF Power MOSFET

Brand NXP Semiconductors

Number of Channels 1 Channel

Moisture Sensitive Yes

Product Type RF MOSFET Transistors

Standard Pack Qty 1000

Subcategory MOSFETs

Vgs - Gate-Source Voltage 10 V

Vgs th - Gate-Source Threshold Voltage 1.2 V

Product Details

1805â€“2170 MHz, 6.3 W AVG., 28 V

This 6.3 watt RF power LDMOS transistor is designed for cellular base

station applications covering the frequency range of 1805 to 2170 MHz.

Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 6.3 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 6.3 Watts Avg., Input Signal PAR = 9.9 dB @ 0 Probability on CCDF.

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Mfr. Part #: AFT27S010NT1