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AFT27S012NT1

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 728-2700 MHz, 1.26 W AVG., 28 V

  • Transistors RF
  • AFT27S012NT1
  • NXP
  • Reel
  • AFT27S012NT1 Datasheet
  • In Stock
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Mfr. Part #: AFT27S012NT1

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  • Specifications

Specifications

Manufacturer NXP
RoHS
Transistor Polarity N-Channel
Technology Si
Id - Continuous Drain Current 154 mA
Vds - Drain-Source Breakdown Voltage - 500 mV, 65 V
Operating Frequency 728 MH to 2700 MHz
Gain 20.9 dB
Output Power 1.26 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Mounting Style SMD/SMT
Package / Case PLD-1.5W
Packaging Reel
RF & Wireless RF MOSFET Transistors
Series AFT27S012N
Transistor Type LDMOS FET
Type RF Power MOSFET
Brand NXP Semiconductors
Number of Channels 1 Channel
Moisture Sensitive Yes
Product Type RF MOSFET Transistors
Standard Pack Qty 1000
Subcategory MOSFETs
Vgs - Gate-Source Voltage - 6 V, 10 V
Vgs th - Gate-Source Threshold Voltage 800 mV

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the AFT27S012NT1. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: AFT27S012NT1

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