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AFV10700GSR5

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 700 W Pulse over 960-1215 MHz, 52 V

Product Category: Transistors RF
Mfr. Part #
AFV10700GSR5
Manufacturer: NXP
Package: Reel
Lead Free Status /RoHS Status:
Data Sheet: AFV10700GSR5 Datasheet
Inventory: In Stock

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Mfr. Part #: AFV10700GSR5

Specifications

Specifications

Manufacturer NXP

Transistor Polarity Dual N-Channel

Technology Si

Id - Continuous Drain Current 2.6 A

Vds - Drain-Source Breakdown Voltage - 500 mV, 105 V

Operating Frequency 1.03 GHz to 1.09 GHz

Gain 19.2 dB

Output Power 700 W

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Mounting Style SMD/SMT

Package / Case NI-780GS-4L

Packaging Reel

RF & Wireless RF MOSFET Transistors

Series AFV10700

Transistor Type LDMOS FET

Type RF Power MOSFET

Brand NXP Semiconductors

Number of Channels 2 Channel

Pd - Power Dissipation 526 W

Product Type RF MOSFET Transistors

Standard Pack Qty 50

Subcategory MOSFETs

Vgs - Gate-Source Voltage - 6 V, 10 V

Vgs th - Gate-Source Threshold Voltage 1.3 V

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Mfr. Part #: AFV10700GSR5