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AFV10700HR5

RF MOSFET Transistors 700W 1030-1090MHz

  • Transistors RF
  • AFV10700HR5
  • NXP
  • Cut Tape/Reel
  • AFV10700HR5 Datasheet
  • In Stock
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Mfr. Part #: AFV10700HR5

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  • Specifications

Specifications

Manufacturer NXP
RoHS
Transistor Polarity Dual N-Channel
Technology Si
Id - Continuous Drain Current 2.6 A
Vds - Drain-Source Breakdown Voltage - 500 mV, 105 V
Rds On - Drain-Source Resistance -
Operating Frequency 1.03 GHz to 1.09 GHz
Gain 19.2 dB
Output Power 700 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Mounting Style SMD/SMT
Package / Case NI-780H-4
Packaging Cut Tape
Packaging Reel
RF & Wireless RF MOSFET Transistors
Series AFV10700
Transistor Type LDMOS FET
Type RF Power MOSFET
Brand NXP Semiconductors
Number of Channels 2 Channel
Pd - Power Dissipation 526 W
Product Type RF MOSFET Transistors
Standard Pack Qty 50
Subcategory MOSFETs
Vgs - Gate-Source Voltage - 6 V, 10 V
Vgs th - Gate-Source Threshold Voltage 1.3 V

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the AFV10700HR5. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: AFV10700HR5

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