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APT50GN60BDQ3G

IGBT Transistors IGBT Fieldstop Low Frequency Combi 600 V 50 A TO-247

  • IGBT Transistors
  • APT50GN60BDQ3G
  • Microchip
  • Tube
  • APT50GN60BDQ3G Datasheet
  • In Stock
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Mfr. Part #: APT50GN60BDQ3G

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  • Specifications

Specifications

Manufacturer Microchip
RoHS
Technology Si
Package / Case TO-247-3
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 1.45 V
Maximum Gate Emitter Voltage - 30 V, 30 V
Continuous Collector Current at 25 C 107 A
Pd - Power Dissipation 366 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Packaging Tube
Brand Microchip Technology
Gate-Emitter Leakage Current 600 nA
Product Type IGBT Transistors
Standard Pack Qty 1
Subcategory IGBTs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the APT50GN60BDQ3G. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: APT50GN60BDQ3G

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