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APT65GP60L2DQ2G

IGBT Transistors IGBT PT MOS 7 Combi 600 V 65 A TO-264 MAX

  • IGBT Transistors
  • APT65GP60L2DQ2G
  • Microchip
  • Tube
  • APT65GP60L2DQ2G Datasheet
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Mfr. Part #: APT65GP60L2DQ2G

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  • Product Details

Product Details

POWER MOS V®

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

• Faster Switching

• Lower Leakage
• 100% Avalanche Tested
• New T-MAX™ Package (Clip-mounted TO-247 Package)

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the APT65GP60L2DQ2G. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: APT65GP60L2DQ2G

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