wholesale AT-32011-TR1G RF Transistors (BJT) supplier,manufacturer,distributor

Image is for illustrative purposes only. Please refer to product description.

AT-32011-TR1G

RF BJT 32mA 12.5dB ~ 14dB Surface Mount 200mW SOT-143 NPN 5.5V

  • RF Transistors (BJT)
  • AT-32011-TR1G
  • Broadcom
  • TO-253-4, TO-253AA
  • AT-32011-TR1G Datasheet
  • In Stock
  • Unit Price:
    Inquiry
  • Quantity:
    -
    +

Please send inquiry,we will respond immediately.

Mfr. Part #: AT-32011-TR1G

*
*
*
Upload Your BOM File

CSV or Excel file format only. Max file size: 2Mb

empty-product
  • Specifications
  • Product Details

Specifications

Manufacturer Broadcom
Product Category RF Transistors (BJT)
Series -
Packaging Alternate Packaging
Mounting-Style SMD/SMT
Package-Case TO-253-4, TO-253AA
Technology Si
Mounting-Type Surface Mount
Supplier-Device-Package SOT-143
Configuration Single Dual Emitter
Power-Max 200mW
Transistor-Type NPN
Electric current collectors 32mA
Voltage-Collector-Emitter-Breakdown-Max 5.5V
DC-Current-Gain-hFE-Min-Ic-Vce 70 @ 2mA, 2.7V
Frequency-Transition -
Noise-Figure-dB-Typ-f 1dB ~ 1.3dB @ 900MHz
Gain 12.5dB ~ 14dB
Pd-Power-Dissipation 200 mW
Maximum Operating Temperature + 150 C
Operating temperature range - 65 C
Operating-Frequency 30000 MHz
Collector-Emitter-Voltage-VCEO-Max 5.5 V
Transistor-Polarity NPN
Emitter-Base-Voltage-VEBO 1.5 V
Maximum-DC-Collector-Current 0.032 A
Continuous-Collector-Current 32 mA
DC-Collector-Base-Gain-hfe-Min 70 at 2 mA at 2.7 V

Product Details

Description

Hewlett Packard’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal for use in battery powered applications in wireless markets. The AT-32033 uses the 3␣ lead SOT-23, while the AT-320 11 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques.
The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 20␣ emitter finger interdigitated geometry yields an easy to match to and extremely fast transistor with moderate power, low noise resistance, and low operating currents.

Features

• High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation
• 900 MHz Performance:
AT-32011: 1 dB NF, 14 dB GA
AT-32033: 1 dB NF, 12.5 dB GA
• Characterized for End-Of-Life Battery Use (2.7 V)
• SOT-23 and SOT-143 SMT Plastic Packages
• Tape-And-Reel Packaging Option Available[1]

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the AT-32011-TR1G. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

READ MORE

Please send inquiry, we will respond immediately.

Mfr. Part #: AT-32011-TR1G

*
*
*
Upload Your BOM File

CSV or Excel file format only. Max file size: 2Mb

empty-product

Copyright © 2024 ICCHIPS ELECTRONICS PTE.LTD. All right Reserved.

PayPalWestern UnionUPSDHLFedExEMSTNTaramex
Contact Us
+1 (620)699-8580
sales@icchips.com
8 Marina View, Asia Square Tower 1, #42-01 & #43-01, Singapore, 018960
PayPalWestern UnionUPSDHLFedExEMSTNTaramex

Copyright © 2024 ICCHIPS ELECTRONICS PTE.LTD. All right Reserved.