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AUIRF9952Q

MOSFET 3.5A, 2.3A N and P-Channel Surface Mount -55Â°C ~ 150Â°C (TJ) 8-SOIC (0.154", 3.90mm Width) 2W HEXFETÂ® 30V

Product Category: FETs - Arrays
Mfr. Part #
AUIRF9952Q
Manufacturer: Infineon
Package: 8-SOIC (0.154", 3.90mm Width)
Lead Free Status /RoHS Status:
Data Sheet: AUIRF9952Q Datasheet
Inventory: In Stock

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Mfr. Part #: AUIRF9952Q

Specifications
Product Details

Specifications

Manufacturer Infineon

Product Category FETs - Arrays

Series HEXFETÂ®

Packaging Tube Alternate Packaging

Package-Case 8-SOIC (0.154", 3.90mm Width)

Operating-Temperature -55Â°C ~ 150Â°C (TJ)

Mounting-Type Surface Mount

Supplier-Device-Package 8-SO

FET-Type N and P-Channel

Power-Max 2W

VDSS â€“ Drain-Source Voltage 30V

Input Capacitance 190pF @ 15V

FET-Feature Logic Level Gate

Current-Continuous-Drain-Id-25Â°C 3.5A, 2.3A

Rds-On-Max-Id-Vgs 100 mOhm @ 2.2A, 10V

Vgs-th-Max-Id 3V @ 250Î¼A

Gate-Charge-Qg-Vgs 14nC @ 10V

Product Details

Description

Specifically designed for Automotive applications, this cellular design of HEXFETÂ® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Features

â€¢ Advanced Planar Technology
â€¢ Low On-Resistance
â€¢ Dual N and P Channel MOSFET
â€¢ Dynamic dV/dT Rating
â€¢ 150Â°C Operating Temperature
â€¢ Fast Switching
â€¢ Full Avalanche Rated
â€¢ Repetitive Avalanche Allowed up to Tjmax
â€¢ Lead-Free, RoHS Compliant
â€¢ Automotive Qualified*

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Mfr. Part #: AUIRF9952Q