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BFU530R

RF Bipolar Transistors NPN wideband silicon RF transistor

Product Category: Transistors RF
Mfr. Part #
BFU530R
Manufacturer: NXP
Package: Cut Tape/Reel
Lead Free Status /RoHS Status:
Data Sheet: BFU530R Datasheet
Inventory: In Stock

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Mfr. Part #: BFU530R

Specifications

Specifications

Manufacturer NXP

Series BFU530

Transistor Type Bipolar Wideband

Technology Si

Transistor Polarity NPN

Operating Frequency 900 MHz

DC Collector/Base Gain hfe Min 60

Collector- Emitter Voltage VCEO Max 16 V

Emitter- Base Voltage VEBO 2 V

Continuous Collector Current 10 mA

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Configuration Single

Mounting Style SMD/SMT

Package / Case SOT143B-4

Packaging Cut Tape

Packaging Reel

RF & Wireless RF Bipolar Transistors

Collector- Base Voltage VCBO 24 V

DC Current Gain hFE Max 200

Operating Temperature Range - 40 C to + 150 C

Type Wideband RF Transistor

Brand NXP Semiconductors

Gain Bandwidth Product fT 11 GHz

Maximum DC Collector Current 65 mA

Pd - Power Dissipation 450 mW

Product Type RF Bipolar Transistors

Standard Pack Qty 3000

Subcategory Transistors

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Mfr. Part #: BFU530R