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BFU550VL

RF Bipolar Transistors NPN wideband silicon RF transistor

Product Category: Transistors RF
Mfr. Part #
BFU550VL
Manufacturer: NXP
Package: Reel
Lead Free Status /RoHS Status:
Data Sheet: BFU550VL Datasheet
Inventory: In Stock

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Mfr. Part #: BFU550VL

Specifications

Specifications

Manufacturer NXP

Series BFU550

Transistor Type Bipolar Wideband

Technology Si

Transistor Polarity NPN

Operating Frequency 900 MHz

DC Collector/Base Gain hfe Min 60

Collector- Emitter Voltage VCEO Max 16 V

Emitter- Base Voltage VEBO 2 V

Continuous Collector Current 15 mA

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Configuration Single

Mounting Style SMD/SMT

Package / Case SOT143B-4

Packaging Reel

RF & Wireless RF Bipolar Transistors

Collector- Base Voltage VCBO 24 V

DC Current Gain hFE Max 200

Height 1.1 mm

Length 3 mm

Operating Temperature Range - 40 C to + 150 C

Output Power 13.5 dBm

Type Wideband RF Transistor

Width 1.4 mm

Brand NXP Semiconductors

Gain Bandwidth Product fT 11 GHz

Maximum DC Collector Current 80 mA

Pd - Power Dissipation 450 mW

Product Type RF Bipolar Transistors

Standard Pack Qty 10000

Subcategory Transistors

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Mfr. Part #: BFU550VL