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BFU660F115

RF Bipolar Transistors Single NPN 21GHz

  • Transistors RF
  • BFU660F,115
  • NXP
  • Cut Tape/Reel
  • BFU660F,115 Datasheet
  • In Stock
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Mfr. Part #: BFU660F,115

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  • Specifications

Specifications

Manufacturer NXP
RoHS
Series BFU660F
Transistor Type Bipolar
Technology Si
Transistor Polarity NPN
DC Collector/Base Gain hfe Min 90
Collector- Emitter Voltage VCEO Max 5.5 V
Emitter- Base Voltage VEBO 2.5 V
Continuous Collector Current 30 mA
Maximum Operating Temperature + 150 C
Configuration Single
Mounting Style SMD/SMT
Package / Case SOT-343F
Packaging Cut Tape
Packaging Reel
RF & Wireless RF Bipolar Transistors
Type RF Bipolar Small Signal
Brand NXP Semiconductors
Gain Bandwidth Product fT 21 GHz
Pd - Power Dissipation 225 mW
Product Type RF Bipolar Transistors
Standard Pack Qty 3000
Subcategory Transistors

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the BFU660F115. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: BFU660F,115

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