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BIDW50N65T

IGBT Transistors IGBT Discrete 650V, 50A in TO-247

  • IGBT Transistors
  • BIDW50N65T
  • Bourns
  • Tube
  • BIDW50N65T Datasheet
  • In Stock
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Mfr. Part #: BIDW50N65T

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  • Specifications

Specifications

Manufacturer Bourns
RoHS
Technology Si
Package / Case TO-247-3
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 650 V
Collector-Emitter Saturation Voltage 1.65 V
Maximum Gate Emitter Voltage - 20 V, 20 V
Continuous Collector Current at 25 C 100 A
Pd - Power Dissipation 416 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series BID
Packaging Tube
Continuous Collector Current Ic Max 100 A
Brand Bourns
Gate-Emitter Leakage Current 400 nA
Product Type IGBT Transistors
Standard Pack Qty 600
Subcategory IGBTs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the BIDW50N65T. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: BIDW50N65T

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