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BLC8G27LS-160AV

Product Category: RF FETs
Mfr. Part #
BLC8G27LS-160AV
Package: SMD
Lead Free Status /RoHS Status:
Data Sheet: BLC8G27LS-160AV Datasheet
Inventory: In Stock

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Mfr. Part #: BLC8G27LS-160AV

Product Details

Product Details

General description

160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.

Features and benefits

â– Excellent ruggedness
â– High efficiency
â– Low thermal resistance providing excellent thermal stability
â– Decoupling leads to enable improved video bandwidth
â– Lower output capacitance for improved performance in Doherty applications
â– Designed for low memory effects providing excellent pre-distortability
â– Internally matched for ease of use
â– Integrated ESD protection
â– Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

Applications

â– RF power amplifier for W-CDMA base stations and multi carrier applications in the
2496 MHz to 2690 MHz frequency range

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Please send inquiry, we will respond immediately.

Mfr. Part #: BLC8G27LS-160AV