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BLF10H6600P

Product Category: RF FETs
Mfr. Part #
BLF10H6600P
Package: SMD
Lead Free Status /RoHS Status:
Data Sheet: BLF10H6600P Datasheet
Inventory: In Stock

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Mfr. Part #: BLF10H6600P

Product Details

Product Details

General description

A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

Features and benefits

â– Excellent ruggedness (VSWR â‰¥ 40 : 1 through all phases)
â– Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
â– High power gain
â– High efficiency
â– Designed for broadband operation (400 MHz to 1000 MHz)
â– Internal input matching for high gain and optimum broadband operation
â– Excellent reliability
â– Easy power control
â– Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)

Applications

â– Communication transmitter applications
â– Industrial applications

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Please send inquiry, we will respond immediately.

Mfr. Part #: BLF10H6600P