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BLF6G10LS-200RN
RF Mosfet LDMOS 28 V 1.4 A 700MHz ~ 1GHz 20dB 200W SOT502B
- Product Category: RF FETs
- Mfr. Part # BLF6G10LS-200RN
- Package: SMD
- Lead Free Status /RoHS Status:
- Data Sheet: BLF6G10LS-200RN Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
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Please send inquiry,we will respond immediately.
Mfr. Part #: BLF6G10LS-200RN
- Product Details
Product Details
General description
200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.Features
â– Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA:â—† Average output power = 40 W
â—† Power gain = 20 dB
â—† Efficiency = 28.5 %
◆ ACPR = −39 dBc
â– Easy power control
â– Integrated ESD protection
â– Enhanced ruggedness
â– High efficiency
â– Excellent thermal stability
â– Designed for broadband operation (700 MHz to 1000 MHz)
â– Internally matched for ease of use
â– Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)
Applications
â– RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multicarrier applications in the 700 MHz to 1000 MHz frequency range.ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the BLF6G10LS-200RN. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: BLF6G10LS-200RN
