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BLF6G20LS-140

Product Category: RF FETs
Mfr. Part #
BLF6G20LS-140
Package: SMD
Lead Free Status /RoHS Status:
Data Sheet: BLF6G20LS-140 Datasheet
Inventory: In Stock

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Mfr. Part #: BLF6G20LS-140

Product Details

Product Details

General description

140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Features

â– Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a
supply voltage of 28 V and an IDq of 1000 mA:
â—† Average output power = 35.5 W
â—† Power gain = 16.5 dB (typ)
â—† Efficiency = 30 %
â—† IMD3 = -37 dBc
â—† ACPR = -40 dBc
â– Easy power control
â– Integrated ESD protection
â– Excellent ruggedness
â– High efficiency
â– Excellent thermal stability
â– Designed for broadband operation (1800 MHz to 2000 MHz)
â– Internally matched for ease of use
â– Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)

Applications

â– RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 1800 MHz to 2000 MHz frequency range

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Mfr. Part #: BLF6G20LS-140