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BLF6G22LS-130

Product Category: RF FETs
Mfr. Part #
BLF6G22LS-130
Package: SMD
Lead Free Status /RoHS Status:
Data Sheet: BLF6G22LS-130 Datasheet
Inventory: In Stock

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Mfr. Part #: BLF6G22LS-130

Product Details

Product Details

General description

130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

Features

â– Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an IDq of 1100 mA:
â—† Average output power = 30 W
â—† Power gain = 17 dB (typ)
â—† Efficiency = 28.5 %
â—† IMD3 = âˆ’37 dBc
â—† ACPR = âˆ’40 dBc
â– Easy power control
â– Integrated ESD protection
â– Excellent ruggedness
â– High efficiency
â– Excellent thermal stability
â– Designed for broadband operation (2000 MHz to 2200 MHz)
â– Internally matched for ease of use
â– Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)

Applications

â– RF power amplifiers W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range

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Mfr. Part #: BLF6G22LS-130